utc 2SC5569 npn epitaxial silicon transistor utc unisonic technologies co. ltd 1 qw-r208-031,a dc/dc converter applications features *high current capacitance. *low collector-to-emitter saturation voltage. *high-speed switching. *high allowable power dissipation. *complementary to 2sa2016. applications *relay drivers, lamp drivers, motor drivers, strobes sot-89 1 1:emitter 2:collector 3:base absolute maximum ratings ( ta=25 ) parameter symbol value unit collector-base voltage v cbo 80 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 6 v collector current ic 7 a collector current (pulse) icp 10 a base current i b 1.2 a collector dissipation tc=25 c pc 1.3* 3.5 w junction temperature t j 150 c storage temperature t stg -55 ~ +150 c * mounted on ceramic board (250mm 2 0.8mm) electrical characteristics (ta=25 , unless otherwise specified) parameter symbol test conditions min typ max unit collector to base breakdown voltage v (br)cbo ic=10 a,i e =0 80 v collector to emitter breakdown voltage v (br)ceo ic=1ma,r be = 50 v emitter to base breakdown voltage v (br)ebo i e =10 a,i e =0 6 v collector cut-off current i cbo v cb =40v,i e =0 0.1 a emitter cut-off current i ebo v eb =4v,ic=0 0.1 a dc current gain h fe v ce =2v,ic=500ma 200 560 ic=3.5a,i b =175ma 160 240 mv collector to emitter saturation voltage v ce (sat) ic=2a,i b =40ma 110 170 mv base to emitter saturation voltage v be (sat) ic=2a,i b =40ma 0.83 1.2 v gain bandwidth product f t v ce =10v,ic=500ma 330 mhz output capacitance cob v cb =10v, f=1mhz 28 pf turn-on time t on see specified test circuit 30 ns storage time t stg see specified test circuit 420 ns
utc 2SC5569 npn epitaxial silicon transistor utc unisonic technologies co. ltd 2 qw-r208-031,a parameter symbol test conditions min typ max unit fall time t f see specified test circuit 25 ns switching time test circuit 50 input output + + d.c. Q 1% v r v be 100 f i b1 i b2 470 f v cc = 25v r b r l pw=20 s = -5v 20i b1 = -20i b2 =i c =2.5a collector current, ic (a) 2.0 0 0.8 1.2 1.6 0.4 0 4 5 6 7 2 3 1 10ma 1.0 0.4 0.6 0.8 0.2 0 3 4 5 6 1 2 0 dc current gain,h fe collector current, ic ( a ) 1.0 2 35 2 h fe - ic 0.01 0.1 5 7 1000 7 3 20ma 30ma 4 0 m a 90ma 7 0 m a 1.2 1.4 7 8 collector current, ic (a) 3 5 27 10 35 27 2 5 7 100 3 10 collector current, ic ( a ) 1.0 2 3 5 2 0.01 0.1 5 7 100 7 3 35 27 10 35 27 2 5 7 10 3 1.0 2 5 7 1000 3 8 0 m a 6 0 m a i b =0 5 0 m a 1 0 0 m a collector to emitter voltage, v ce (v) ic - v ce 2 5 c - 2 5 c v ce = 2v base to emitter voltage, v be (v) 25 c -25 c v ce = 2v i c /i b =20 2 5 c - 2 5 c collector-to-emitter v ce (sat) - ic ic - v be t a = 7 5 c t a = 7 5 c ta = 75 c saturation voltage, v ce(sat) (mv)
utc 2SC5569 npn epitaxial silicon transistor utc unisonic technologies co. ltd 3 qw-r208-031,a collector current,ic -a 1.0 2 3 5 2 0.01 0.1 5 7 1000 7 3 35 27 10 3 5 2 7 2 5 7 100 3 10 2 5 7 10000 3 i c /i b =50 t a = 7 5 25 c - 2 5 c collector-to-emitter saturation voltage, v ce(sat) (mv) v ce (sat) - ic collector current, ic (a) 1.0 2 35 2 0.01 0.1 5 7 10000 7 3 3 5 27 10 35 27 2 5 7 1000 3 100 ta =-25 25 c 75 c i c /i b =50 collector-to-emitter saturation voltage, v be(sat) (mv) 1.0 2 5 cob - v cb 0.1 5 7 3 3 5 27 10 35 27 2 5 7 100 3 f=1mhz output capacitance, cob (pf) collector current, ic (a) 1.0 2 2 f t - ic 0.1 5 7 1000 7 3 3 5 27 10 35 27 2 5 7 100 3 10 v ce =10v gain-bandwidth produtc, f t (mhz) 50.01 735 35 2 2 5 7 10 3 10 2 35 2 0.1 1.0 5 7 1.0 7 3 35 27 100 3 5 2 7 2 5 7 0.1 3 0.01 2 5 7 10 3 a s o tc=25 c single pulse for pnp,the minus sign is omitted. 100ms i cp =10a i c =7a d c o p e r a t i o n 1 0 m s 1 m s 5 0 0 s 1 0 0 s 2 collector current, ic (a) 100 40 60 80 20 0 0.5 1.0 1.3 1.5 0 120 140 2.0 collector dissipation, pc (w) pc - ta 2 160 v be (sat) - ic ambient tem p erature, ta ( ) collector to emitter volta g e, v ce ( v ) collector to base voltage, v cb (v) m o u n t e d o n a c e r a m i c b o a r d ( 2 5 0 m m 0 . 8 m m )
utc 2SC5569 npn epitaxial silicon transistor utc unisonic technologies co. ltd 4 qw-r208-031,a 100 40 60 80 20 0 1.5 2.0 2.5 3.0 0.5 1.0 0 120 140 3.5 4.0 collector dissipation, pc (w) pc - tc 160 case tem p erature, tc ( c ) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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